State of the Art 2D and 3D Process and Device Simulation of GaN-Based Devices

Introduction Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected to have much better performance than silicon. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration, a higher electric breakdown fi eld, a higher thermal conductivity, and a faster saturated electron drift velocity.